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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC2245
DESCRIPTION *High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min) *High Switching Speed APPLICATIONS *Power switching *Power amplification *Power driver
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCEO VEBO IC ICM IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
MAX 450
UNIT V
Collector Current-Continuous Collector Current-Peak
w
ww
scs .i
400 5 10 20 4 100 200 -65~200
V
V
.cn mi e
A A A
Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range
PC Tj Tstg
W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT /W
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC2245
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustainig Voltage
IC= 100mA; L= 25mH
400
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
B
1.2
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
B
1.5
V
hFE
DC Current Gain
IC= 4A; VCE= 5V VCB= 450V; IE= 0 TC=125
10 1.0 4.0 5.0
ICBO
Collector Cutoff Current
mA
ICEO
Collector Cutoff Current
VCE= 400V; IB= 0
IEBO
Emitter Cutoff Current
Switching Times
tr
Rise Time
tstg
Storage Time
w w
scs .i w
VEB= 5V; IC= 0
.cn mi e
mA
1.0
mA
1.0
s
IC=4A; IB1=- IB2= 0.8A
2.0
s
tf
Fall Time
1.0
s
isc Websitewww.iscsemi.cn


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